Investigation of microstructure and dielectric behavior of Bi2/3Cu3?xMgxTi4O12 (x = 0, 0.05, 0.1 and 0.2) ceramics synthesized by semi-wet route

In this manuscript, we have reported the synthesis and characterization of Mg-doped undoped BCTO ceramic (Bi2/3Cu3?xMgxTi4O12, x = 0, 0.05, 0.1 0.2) sintered at 1173 K for 8 h, which been prepared by semi-wet route. The single-phase formation was approved XRD pattern. microstructural properties were studied TEM AFM. samples characterized dielectric impedance spectroscopic properties. constant (?r) calculated to be 3024 ceramics 423 100 Hz. tangent loss (tan ?) value 0.45 10 kHz. internal Barrier Layer Capacitance (IBLC) mechanism responsible high constant. XPS spectroscopy confirmed oxidation state elements present in ceramic. It observed from Impedance modulus studies that there existence Maxwell–Wagner form relaxation ceramics. temperature range 300–500 K, Bi2/3Cu3?xMgxTi4O12 (where 0.1, follows Arrhenius behavior with an almost single slope.